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SI7812DN Datasheet, PDF (4/14 Pages) Vishay Siliconix – N-Channel 75-V (D-S) MOSFET
Si7812DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
10
VGS = 10 thru 4 V
20
8
15
6
10
5
3V
0
0.0
0.4
0.8
1.2
1.6
2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.040
0.036
VGS = 4.5 V
0.032
0.028
VGS = 10 V
0.024
0.020
0
5
10
15
20
25
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 7.2 A
8
VDS = 38 V
6
VDS = 53 V
4
2
0
0
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4
4
8
12
16
20
Qg - Total Gate Charge (nC)
Gate Charge
4
TC = 125 °C
2
25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1200
1000
Ciss
800
600
400
200
Coss
0 Crss
0
15
30
45
60
75
VDS - Drain-to-Source Voltage (V)
Capacitance
2.0
1.8 ID = 7.2 A
1.6
VGS = 10 V
1.4
VGS = 4.5 V
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73332
S-83050-Rev. D, 29-Dec-08