SI7812DN Datasheet, PDF (2/14 Pages) Vishay Siliconix – N-Channel 75-V (D-S) MOSFET

Si7812DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, b}
t ≤ 10 s
Maximum Junction-to-Case (Drain)
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 81 °C/W.
Symbol
R_thJA
R_thJC
Typical
26
1.9
Maximum
33
2.4
Unit
°C/W
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0 V, I_D = 250 µA
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
ΔV_DS/T_J
ΔV_GS(th)/T_J
I_D = 250 µA
Gate-Source Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 µA
V_DS = V_GS, I_D = 5 mA
Gate-Source Leakage
I_GSS
V_DS = 0 V, V_GS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Current^a
I_DSS
I_D(on)
V_DS = 75 V, V_GS = 0 V
V_DS = 75 V, V_GS = 0 V, T_J = 55 °C
V_DS ≥ 5 V, V_GS = 10 V
Drain-Source On-State Resistance^a
Forward Transconductance^a
R_DS(on)
g_fs
V_GS = 10 V, I_D = 7.2 A
V_GS = 4.5 V, I_D = 6.4 A
V_DS = 15 V, I_D = 7.2 A
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
C_oss
V_DS = 35 V, V_GS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
C_rss
Total Gate Charge
Q_g
V_DS = 38 V, V_GS = 10 V, I_D = 7.2 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
V_DS = 38 V, V_GS = 4.5 V, I_D = 7.2 A
f = 1 MHz
V_DD = 38 V, R_L = 6.7 Ω
I_D ≅ 5.7 A, V_GEN = 4.5 V, R_g = 1 Ω
V_DD = 38 V, R_L = 6.7 Ω
I_D ≅ 5.7 A, V_GEN = 10 V, R_g = 1 Ω
Min.
Typ.
Max.
Unit
75
V
65
- 6.4
mV/°C
1.0
2.0
3.0
V
2.3
± 100
nA
1
µA
10
25
A
0.031 0.037
Ω
0.038 0.046
23
S
840
110
pF
50
16
24
8
12
nC
2.8
3.6
1
Ω
20
30
130
200
20
30
50
75
ns
15
25
20
30
35
40
10
15
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Document Number: 73332
S-83050-Rev. D, 29-Dec-08