SI7812DN Datasheet, PDF (5/14 Pages) Vishay Siliconix – N-Channel 75-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
0.08
0.07
10
T_J = 150 °C
0.06
0.05
Si7812DN
Vishay Siliconix
I_D = 7.2 A
T_J = 125 °C
0.04
T_J = 25 °C
0.03
T_J = 25 °C
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.02
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
2.6
2.4
2.2
I_D = 250 µA
2.0
1.8
1.6
1.4
1.2
1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
50
40
30
20
10
0
0.01
0.1
1
10
100
1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
10
100 µs
1 ms
1
10 ms
100 ms
0.1
1s
10 s
DC
0.01
0.001
T_A = 25 °C
Single Pulse
0.1
1
BVDSS Limited
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 73332
S-83050-Rev. D, 29-Dec-08
www.vishay.com
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