SI7540DP Datasheet, PDF (6/8 Pages) Vishay Siliconix – N- and P-Channel 12-V (D-S) MOSFET

Si7540DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
20
P−CHANNEL
Transfer Characteristics
16
V_GS = 5 thru 2.5 V
12
8
2V
4
1.5 V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.15
0.12
16
12
8
T_C = 125_C
4
25_C
-55 _C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS - Gate-to-Source Voltage (V)
2500
Capacitance
C_iss
2000
0.09
1500
0.06
0.03
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
4
8
12
16
20
I_D - Drain Current (A)
5
V_DS = 6 V
I_D = 8.9 A
4
Gate Charge
1000
500
C_rss
C_oss
0
0
2
4
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 8.9 A
1.4
3
1.2
2
1.0
1
0.8
0
0
4
8
12
16
Q_g - Total Gate Charge (nC)
www.vishay.com
6
0.6
-50 -25 0 25 50 75 100 125 150
T_J - Junction Temperature (_C)
Document Number: 71911
S-22387—Rev.. C, 16-Dec-02