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SI7540DP Datasheet, PDF (2/8 Pages) Vishay Siliconix – N- and P-Channel 12-V (D-S) MOSFET
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Si7540DP
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = VGS, ID = -250 mA
VDS = 0 V, VGS = "8 V
VDS = 0 V, VGS = "8 V
VDS = 9.6 V, VGS = 0 V
VDS = -9.6 V, VGS = 0 V
VDS = 9.6 V, VGS = 0 V, TJ = 55_C
VDS = -9.6 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 4.5 V
VDS p -5 V, VGS = -4.5 V
VGS = 4.5 V, ID = 11.8 A
VGS = -4.5 V, ID = -8.9 A
VGS = 2.5 V, ID = 9.8 A
VGS = -2.5 V, ID = -6.9 A
VDS = 5 V, ID = 11.8 A
VDS = -5 V, ID = -8.9 A
IS = 2.9 A, VGS = 0 V
IS = -2.9 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
VDS = 6 V, VGS = 4.5 V, ID = 11.8 A
Qgs
P-Channel
VDS = -6 V, VGS = -4.5 V, ID = -8.9 A
Qgd
Gate Resistance
RG
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain
Reverse Recovery Time
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
N-Channel
VDD = 6 V, RL = 6 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
P-Channel
VDD = -6 V, RL = 6 W
ID ^ -1 A, VGEN = -4.5 V, RG = 6 W
IF = 2.9 A, di/dt = 100 A/ms
IF = -2.9 A, di/dt = 100 A/ms
Min Typ Max Unit
N-Ch
0.6
P-Ch -0.6
1.5
V
-1.5
N-Ch
P-Ch
"100
nA
"100
N-Ch
1
P-Ch
N-Ch
-1
mA
5
P-Ch
-5
N-Ch
20
A
P-Ch
-20
N-Ch
0.014 0.017
P-Ch
N-Ch
0.026 0.032
W
0.020 0.025
P-Ch
0.043 0.053
N-Ch
32
S
P-Ch
23
N-Ch
P-Ch
0.77
1.2
V
-0.8
-1.2
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
11.5
17
13
20
3.2
nC
4.1
2.5
1.9
1.7
W
3.5
30
45
35
55
50
75
42
65
60
90
ns
54
85
25
40
17
30
40
80
40
80
www.vishay.com
2
Document Number: 71911
S-22387—Rev.. C, 16-Dec-02
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