SI7540DP Datasheet, PDF (1/8 Pages) Vishay Siliconix – N- and P-Channel 12-V (D-S) MOSFET

New Product
Si7540DP
Vishay Siliconix
N- and P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
N-Channel
12
P-Channel
-12
0.017 @ V_GS = 4.5 V
0.025 @ V_GS = 2.5 V
0.032 @ V_GS = -4.5 V
0.053 @ V_GS = -2.5 V
I_D (A)
11.8
9.8
-8.9
-6.9
PowerPAKt SO-8
6.15 mm
D1
8
D1
7
D2
6
D2
5
S1
1
G1
2
5.15 mm
S2
3
G2
4
Bottom View
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKt Package with
Low 1.07-mm Profile
D PWM Optimized for High Efficiency
APPLICATIONS
D Point-of-Load Synchronous Rectifier
- 5-V or 3.3-V BUS Step Down
- Q_g Optimized for 500-kHz Operation
D Synchronous Buck, Shoot-Thru Resistant
D₁
S₂
G₂
G₁
S₁
N-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol 10 secs Steady State 10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
T_A = 25_C
T_A = 70_C
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
T_A = 25_C
T_A = 70_C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
12
-12
"8
"8
11.8
7.6
- 8.9
-5.7
9.5
6.1
-7.1
-4.6
20
2.9
1.1
-2.9
-1.1
3.5
1.4
3.5
1.4
2.2
0.9
2.2
0.9
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case (Drain)
t v 10 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71911
S-22387—Rev.. C, 16-Dec-02
Symbol
R_thJA
R_thJC
N-Channel
Typ
Max
26
35
60
85
3.9
5.5
P-Channel
Typ
Max
26
35
60
85
3.9
5.5
Unit
_C/W
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