SI7540DP Datasheet, PDF (3/8 Pages) Vishay Siliconix – N- and P-Channel 12-V (D-S) MOSFET

New Product
Si7540DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
20
V_GS = 5 thru 2.5 V
16
16
N−CHANNEL
Transfer Characteristics
12
2V
8
4
1.5 V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.05
12
8
4
0
0.0
2500
T_C = 125_C
25_C
-55 _C
0.5
1.0
1.5
2.0
2.5
V_GS - Gate-to-Source Voltage (V)
Capacitance
0.04
0.03
0.02
0.01
V_GS = 2.5 V
V_GS = 4.5 V
2000
1500
1000
500
C_iss
C_rss
C_oss
0.00
0
4
8
12
16
20
I_D - Drain Current (A)
5
V_DS = 6 V
I_D = 11.8 A
4
Gate Charge
0
0
2
4
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 11.8 A
1.4
3
1.2
2
1.0
1
0.8
0
0
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Document Number: 71911
S-22387—Rev.. C, 16-Dec-02
0.6
-50 -25 0 25 50 75 100 125 150
T_J - Junction Temperature (_C)
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