SI7540DP Datasheet, PDF (4/8 Pages) Vishay Siliconix – N- and P-Channel 12-V (D-S) MOSFET

Si7540DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N−CHANNEL
Source-Drain Diode Forward Voltage
20
On-Resistance vs. Gate-to-Source Voltage
0.05
T_J = 150_C
10
0.04
I_D = 5 A
0.03
I_D = 11.8 A
T_J = 25_C
0.02
0.01
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Threshold Voltage
0.4
0.2
I_D = 250 mA
-0.0
-0.2
0.00
0
40
32
24
16
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Single Pulse Power
-0.4
8
-0.6
-50 -25
0 25 50 75 100 125 150
T_J - Temperature (_C)
0
0.01
0.1
Safe Operating Area, Junction-To-Ambient
100
r_DS(on) Limited
I_DM Limited
10
1 ms
1
I_D(on)
Limited
0.1
T_A = 25_C
Single Pulse
10 ms
100 ms
1s
10 s
dc
0.01
BV_DSS Limited
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
www.vishay.com
4
1
10
Time (sec)
100 600
Document Number: 71911
S-22387—Rev.. C, 16-Dec-02