 English |
|
|
|
|
|
|
|
| SI7111EDN Datasheet, PDF (6/7 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET | |||
| |||
| ◁ |
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si7111EDN
Vishay Siliconix
1
Duty cycle = 0.5
Axis Title
10000
0.2
0.1
0.1
0.05
0.02
0.01
0.0001
Notes:
PDM
1000
Single pulse
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
2nd line
t1
t2
1. Duty cycle, D =
t1
t2
2. Per unit base = RthJA = 81 °C/W
100
3. TJM - TA = PDMZthJA (t)
4. Surface mounted
10
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty cycle = 0.5
Axis Title
10000
1000
0.2
0.1
0.05
0.1
0.0001
0.02
Single pulse
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
100
10
10
ï
ï
ï
ï
ï
ï
ï
ï
ï
ï
ï
ï
ï
ï
ï
ï
ï
ï
ï
ï
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67807.
S16-1520-Rev. A, 01-Aug-16
6
Document Number: 67807
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese