SI7111EDN Datasheet, PDF (3/7 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

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Si7111EDN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.005
Axis Title
10000
Axis Title
10^-2
10000
0.004
0.003
0.002
0.001
T_J = 25 °C
1000
100
0.000
10
0
4
8
12
16
20
V_GS - Gate-to-Source Voltage (V)
2nd line
Gate-Current vs. Gate-Source Voltage
10^-4
10^-6
10^-8
T_J = 150 °C
T_J = 25 °C
1000
100
10^-10
0
4
8
12
16
V_GS - Gate-to-Source Voltage (V)
2nd line
10
20
Gate-Current vs. Gate-Source Voltage
150
120
90
60
30
0
0
Axis Title
V_GS = 5 V thru 3 V
V_GS = 2.5 V
10000
1000
V_GS = 2 V
100
V_GS = 1.5 V
V_GS = 1 V
10
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
2nd line
Output Characteristics
Axis Title
100
10000
80
60
40
T_C = 25 °C
20
T_C = 125 °C
T_C = -55 °C
0
0
1
2
3
4
V_GS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
1000
100
10
5
0.025
Axis Title
10000
0.020
0.015
V_GS = 2.5 V
1000
0.010
0.005
V_GS = 4.5 V
100
0
10
0
12
24
36
48
60
I_D - Drain Current (A)
2nd line
On-Resistance vs. Drain Current and Gate Voltage
8000
Axis Title
10000
6400
C_iss
4800
1000
3200
1600
C_oss
C_rss
0
0
6
12
18
24
V_DS - Drain-to-Source Voltage (V)
2nd line
Capacitance
100
10
30
S16-1520-Rev. A, 01-Aug-16
3
Document Number: 67807
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000