SI7111EDN Datasheet, PDF (4/7 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si7111EDN
Vishay Siliconix
Axis Title
4.5
I_D = 10 A
3.6
V_DS = 15 V
2.7
V_DS = 10 V
1.8
0.9
10000
V_DS = 20 V
1000
100
Axis Title
1.6
10000
1.4
I_D = 10 A
1.2
V_GS = 4.5 V
1000
1.0
V_GS = 2.5 V
100
0.8
0
10
0
12
24
36
48
60
Q_g - Total Gate Charge (nC)
2nd line
Gate Charge
0.6
-50
10
-25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
Axis Title
100
10000
10
1
0.1
0.01
T_J = 150 °C
T_J = 25 °C
1000
100
0.001
0
0.2 0.4 0.6 0.8 1.0
V_SD - Source-to-Drain Voltage (V)
2nd line
10
1.2
Source-Drain Diode Forward Voltage
Axis Title
0.6
10000
0.4
I_D = 250 μA
1000
0.2
I_D = 5 mA
0
100
-0.2
-0.4
-50 -25
10
0 25 50 75 100 125 150
T_J - Temperature (°C)
2nd line
Threshold Voltage
0.05
Axis Title
10000
0.04
I_D = 10 A
0.03
1000
0.02
0.01
100
T_J = 125 °C
T_J = 25 °C
0
10
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Axis Title
120
10000
100
80
1000
60
40
100
20
0
0.001
0.01
0.1
1
Time (s)
2nd line
10
10
Single Pulse Power, Junction-to-Ambient
S16-1520-Rev. A, 01-Aug-16
4
Document Number: 67807
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000