SI7111EDN Datasheet, PDF (5/7 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si7111EDN
Vishay Siliconix
1000
Axis Title
10000
I_DM limited
100
I_D limited
10
100 μs
1000
1 ms
1
Limited by R_DS(on) ⁽¹⁾
10 ms
100 ms100
0.1
T_A = 25 °C
Single pulse
0.01
0.01
0.1
BVDSS limited
1
10
1s
10 s
DC
10
100
V_DS - Drain-to-Source Voltage (V)
(1) _{VGS > minimum VGS at which RDS(on) is specified}
Safe Operating Area, Junction-to-Ambient
Axis Title
65
10000
52
1000
39
26
100
13
0
10
0
25 50 75 100 125 150
T_C - Case Temperature (°C)
2nd line
Power, Junction-to-Case
Axis Title
70
10000
Axis Title
2.0
10000
56
1.6
1000
1000
42
1.2
28
0.8
100
100
14
0.4
0
10
0
25 50 75 100 125 150
T_C - Case Temperature (°C)
2nd line
Current Derating ^a
0
10
0
25 50 75 100 125 150
T_A - Ambient Temperature (°C)
2nd line
Power, Junction-to-Ambient
Note
a. The power dissipation P_D is based on T_J max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-1520-Rev. A, 01-Aug-16
5
Document Number: 67807
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