SI5999EDU Datasheet, PDF (6/9 Pages) Vishay Siliconix – Dual P-Channel 20 V (D-S) MOSFET

Si5999EDU
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
Single Pulse
10^-3
1
Duty Cycle = 0.5
Notes:
P_DM
t₁
1.
2.
t₂
Duty Cycle, D
Per Unit Base
=
=
t₁
Rt^2thJA
=
87
°C/W
3. T_JM - T_A = P_DM Z _thJA(t)
4. Surface Mounted
10^-2
10^-1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
0.2
0.05
0.1
Single Pulse
0.02
0.01
10^-4
10^-3
10^-2
10^-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67019.
www.vishay.com
6
Document Number: 67019
S10-2428-Rev. A, 25-Oct-10