SI5999EDU Datasheet, PDF (5/9 Pages) Vishay Siliconix – Dual P-Channel 20 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
Limited by R_DS(on)*
10
100 μs
1
0.1
T_A = 25 °C
Single Pulse
1 ms
BVDSS Limited
10 ms
100 ms
1 s, 10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
12
15
Si5999EDU
Vishay Siliconix
12
9
9
Package Limited
6
6
3
3
0
0
1.5
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power Derating, Junction-to-Case
1.2
0.9
0.6
0.3
0.0
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
Document Number: 67019
S10-2428-Rev. A, 25-Oct-10
* The power dissipation P_D is based on T_J(max) = 150 °C, using
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is used.
It is used to determine the current rating, when this rating falls below
the package limit.
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