SI5999EDU Datasheet, PDF (4/9 Pages) Vishay Siliconix – Dual P-Channel 20 V (D-S) MOSFET

Si5999EDU
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
1.5
I_D = 5 A
8
1.3
V_DS = 5 V
V_DS = 10 V
6
1.1
V_DS = 16 V
4
0.9
2
I_D = 5 A
V_GS = 4.5 V
V_GS = 2.5 V
0
0
100
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Gate Charge
T_J = 150 °C
10
T_J = 25 °C
1
0.1
0.0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.25
1.05
0.85
I_D = 250 μA
0.65
0.45
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.20
0.15
I_D = 5 A
0.10
T_J = 125 °C
0.05
T_J = 25 °C
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
0
0.001 0.01
0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
www.vishay.com
4
Document Number: 67019
S10-2428-Rev. A, 25-Oct-10