SI5999EDU Datasheet, PDF (3/9 Pages) Vishay Siliconix – Dual P-Channel 20 V (D-S) MOSFET

Si5999EDU
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.04
10^-4
0.03
10^-5
10^-6
I_GSS at 150 °C
0.02
0.01
10^-7
10^-8
10^-9
I_GSS at 25 °C
0
0
4
8
12
16
V_GS - Gate-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
20
V_GS = 5 V thru 3.5 V
15
V_GS = 3 V
V_GS = 2.5 V
10
5
V_GS = 2 V
V_GS = 1.5 V
0
0.0
0.5
1.0
1.5
2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.10
V_GS = 2.5 V
10^-10
0
5
4
8
12
16
V_GS - Gate-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
4
3
2
1
0
0.0
1000
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.6
1.2
1.8
2.4
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.08
750
0.06
0.04
V_GS = 4.5 V
0.02
0
5
10
15
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current
C_iss
500
C_oss
250
C_rss
0
0
5
10
15
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 67019
S10-2428-Rev. A, 25-Oct-10
www.vishay.com
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