SI5513DC Datasheet, PDF (6/7 Pages) Vishay Siliconix – Complementary 20-V (D-S) MOSFET

Si5513DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P−CHANNEL
Gate Charge
5
V_DS = 10 V
I_D = 2.1 A
4
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 2.1 A
1.4
3
1.2
2
1.0
1
0.8
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
10
T_J = 150_C
T_J = 25_C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD − Source-to-Drain Voltage (V)
Threshold Voltage
0.4
0.3
I_D = 250 mA
0.2
0.1
0.0
−0.1
−0.2
−50 −25
0 25 50 75 100 125 150
T_J − Temperature (_C)
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6
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.40
0.35
0.30
I_D = 2.1 A
0.25
0.20
0.15
0.10
0.05
0.00
0
50
1
2
3
4
5
V_GS − Gate-to-Source Voltage (V)
Single Pulse Power
40
30
20
10
0
10^−4 10^−3
10^−2
10^−1
1
10
Time (sec)
100 600
Document Number: 71186
S-42138—Rev. F, 15-Nov-04