SI5513DC Datasheet, PDF (2/7 Pages) Vishay Siliconix – Complementary 20-V (D-S) MOSFET

Si5513DC
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 mA
V_DS = V_GS, I_D = −250 mA
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = "12 V
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = 20 V, V_GS = 0 V
V_DS = −20 V, V_GS = 0 V
V_DS = 20 V, V_GS = 0 V, T_J = 70_C
V_DS = − 20 V, V_GS = 0 V, T_J = 70_C
V_DS w 5 V, V_GS = 4.5 V
V_DS p −5 V, V_GS = −4.5 V
V_GS = 4.5 V, I_D = 3.1 A
V_GS = −4.5 V, I_D = −2.1 A
V_GS = 2.5 V, I_D = 2.3 A
V_GS = −2.5 V, I_D = −1.7 A
V_DS = 10 V, I_D = 3.1 A
V_DS = −10 V, I_D = −2.1 A
I_S = 0.9 A, V_GS = 0 V
I_S = −0.9 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
N-Channel
V_DS = 10 V, V_GS = 4.5 V, I_D = 3.1 A
Q_gs
P-Channel
V_DS = −10 V, V_GS = −4.5 V, I_D = −2.1 A
Q_gd
Turn-On Delay Time
t_d(on)
Rise Time
t_r
Turn-Off Delay Time
t_d(off)
Fall Time
t_f
Source-Drain
Reverse Recovery Time
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%,
b. Guaranteed by design, not subject to production testing.
N-Channel
V_DD = 10 V, R_L = 10 W
I_D ^ 1 A, V_GEN = 4.5 V, R_g = 6 W
P-Channel
V_DD = −10 V, R_L = 10 W
I_D ^ −1 A, V_GEN = −4.5 V, R_g = 6 W
I_F = 0.9 A, di/dt = 100 A/ms
I_F = −0.9 A, di/dt = 100 A/ms
Min Typ Max Unit
N-Ch
P-Ch
0.6
−0.6
1.5
V
−1.5
N-Ch
P-Ch
"100
nA
"100
N-Ch
1
P-Ch
N-Ch
−1
mA
5
P-Ch
−5
N-Ch
10
A
P-Ch
−10
N-Ch
0.065 0.075
P-Ch
N-Ch
0.130 0.155
W
0.115 0.134
P-Ch
0.215 0.260
N-Ch
8
S
P-Ch
5
N-Ch
P-Ch
0.8
1.2
V
−0.8
−1.2
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
4
6
3
6
0.6
nC
0.9
1.3
0.6
12
18
13
20
35
55
35
55
19
30
ns
25
40
9
15
25
40
40
80
40
80
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71186
S-42138—Rev. F, 15-Nov-04