SI5513DC Datasheet, PDF (4/7 Pages) Vishay Siliconix – Complementary 20-V (D-S) MOSFET

Si5513DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N−CHANNEL
Source-Drain Diode Forward Voltage
10
On-Resistance vs. Gate-to-Source Voltage
0.20
0.15
T_J = 150_C
0.10
T_J = 25_C
0.05
I_D = 3.1 A
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
Threshold Voltage
0.4
0.2
−0.0
I_D = 250 mA
−0.2
0.00
0
50
40
30
20
1
2
3
4
5
V_GS − Gate-to-Source Voltage (V)
Single Pulse Power
−0.4
10
−0.6
−50 −25
0 25 50 75 100 125 150
T_J − Temperature (_C)
0
10^−4 10^−3
10^−2 10^−1
1
Time (sec)
10 100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1 _0.05
0.02
0.01
10^−4
Single Pulse
10^−3
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4
10^−2
10^−1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 90_C/W
3. T_JM − T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
1000
Document Number: 71186
S-42138—Rev. F, 15-Nov-04