SI5513DC Datasheet, PDF (1/7 Pages) Vishay Siliconix – Complementary 20-V (D-S) MOSFET

Si5513DC
Vishay Siliconix
Complementary 20-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
N-Channel
20
P-Channel
−20
r_DS(on) (W)
0.075 @ V_GS = 4.5 V
0.134 @ V_GS = 2.5 V
0.155 @ V_GS = −4.5 V
0.260 @ V_GS = −2.5 V
I_D (A)
4.2
3.1
−2.9
−2.2
Q_g (Typ)
4
3
1206-8 ChipFETr
1
S₁
D₁
G₁
D₁
S₂
D₂
G₂
D₂
Bottom View
Marking Code
EB XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si5513DC-T1
Si5513DC-T1—E3 (Lead (Pb)-Free)
D₁
S₂
G₂
G₁
S₁
N-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol ^{5 secs Steady State 5 secs Steady State}
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
T_A = 25_C
T_A = 85_C
Maximum Power Dissipation^a
T_A = 25_C
T_A = 85_C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{b, c}
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
−20
"12
4.2
3.1
−2.9
−2.1
3.0
2.2
−2.1
−1.5
10
−10
1.8
0.9
−1.8
−0.9
2.1
1.1
2.1
1.1
1.1
0.6
1.1
0.6
−55 to 150
260
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t v 5 sec
50
Steady State
R_thJA
90
Steady State
R_thJF
30
60
110
_C/W
40
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71186
S-42138—Rev. F, 15-Nov-04
www.vishay.com
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