SI5513DC Datasheet, PDF (5/7 Pages) Vishay Siliconix – Complementary 20-V (D-S) MOSFET

Si5513DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
N−CHANNEL
0.2
0.1
0.1 _0.05
0.02
Single Pulse
0.01
10^−4
10^−3
10^−2
10^−1
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
3.5 V
10
V_GS = 5 thru 4 V
8
8
3V
1
10
P−CHANNEL
Transfer Characteristics
T_C = −55_C
25_C
6
2.5 V
4
2V
2
1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.4
6
125_C
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS − Gate-to-Source Voltage (V)
Capacitance
600
V_GS = 2.5 V
0.3
0.2
V_GS = 3.6 V
500
C_iss
400
300
V_GS = 4.5 V
0.1
0.0
0
2
4
6
8
10
I_D − Drain Current (A)
Document Number: 71186
S-42138—Rev. F, 15-Nov-04
200
C_oss
100
C_rss
0
0
4
8
12
16
20
V_DS − Drain-to-Source Voltage (V)
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