SI4955DY_05 Datasheet, PDF (6/9 Pages) Vishay Siliconix – Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs

Si4955DY
Vishay Siliconix
CHANNEL 2 TYPICAL CHARACTERISTICS 25 °C unless noted
20
20
V_GS = 5 thru 2 V
16
16
12
1.5 V
8
4
0
0
0.10
1V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.08
0.06
0.04
0.02
0.00
0
V_GS = 1.8 V
V_GS = 2.5 V
V_GS = 4.5 V
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current
5
V_DS = 10 V
I_D = 7 A
4
12
8
4
0
0.0
3000
T_C = 125 °C
25 °C
- 55 °C
0.4
0.8
1.2
1.6
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
2500
2000
C_iss
1500
1000
C_oss
500
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 4.5 V
I_D = 7 A
1.4
3
1.2
2
1.0
1
0.8
0
0
4
8
12
16
20
24
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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6
Document Number: 72241
S-61006-Rev. C, 12-Jun-06