SI4955DY_05 Datasheet, PDF (3/9 Pages) Vishay Siliconix – Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs

CHANNEL 1 TYPICAL CHARACTERISTICS 25 °C unless noted
20
20
V_GS = 10 thru 5 V
16
16
Si4955DY
Vishay Siliconix
12
4V
8
4
3V
0
0
1
2
3
4
5
6
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.20
12
8
4
0
0
1000
T_C = 125 °C
25 °C
- 55 °C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.16
0.12
0.08
V_GS = 4.5 V
0.04
V_GS = 10 V
0.00
0
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
V_DS = 15 V
I_D = 5.0 V
8
800
C_iss
600
400
C_oss
200
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 10 V
I_D = 5.0 V
1.4
6
1.2
4
1.0
2
0.8
0
0
2
4
6
8
10 12 14
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 72241
S-61006-Rev. C, 12-Jun-06
www.vishay.com
3