SI4955DY_05 Datasheet, PDF (1/9 Pages) Vishay Siliconix – Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs

New Product
Si4955DY
Vishay Siliconix
Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
Channel-1 - 30
0.054 at V_GS = - 10 V
0.100 at V_GS = - 4.5 V
Channel-2 - 20
0.027 at V_GS = - 4.5 V
0.035 at V_GS = - 2.5 V
0.048 at V_GS = - 1.8 V
I_D (A)
- 5.0
- 3.7
- 7.0
- 6.2
- 5.2
FEATURES
• TrenchFET^® Power MOSFETs
• Low Gate Drive (2.5 V) Capability For
Channel 2
APPLICATIONS
• Game Station
- Load Switch
RoHS
COMPLIANT
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Top View
Ordering Information: Si4955DY-T1-E3 (Lead (Pb)-free)
S₁
G₁
D₁
P-Channel MOSFET
S₂
G₂
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Channel-1
Channel-2
Unit
10 sec Steady State 10 sec Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 30
V_GS
± 20
- 20
V
±8
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
- 5.0
- 4.0
- 3.8
- 3.0
- 7.0
- 5.6
- 5.3
- 4.2
A
Pulsed Drain Current
I_DM
- 20
Continuous Source Current (Diode Conduction)^a
I_S
- 1.7
- 0.9
- 1.7
- 0.9
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
2.0
1.3
1.1
0.7
2
1.3
1.1
W
0.7
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
t ≤ 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Document Number: 72241
S-61006-Rev. C, 12-Jun-06
Channel-1
Typ
Max
55
62.5
90
110
33
40
Channel-2
Typ
Max
58
62.5
91
110
34
40
Unit
°C/W
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