SI4955DY_05 Datasheet, PDF (4/9 Pages) Vishay Siliconix – Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs

Si4955DY
Vishay Siliconix
CHANNEL 1 TYPICAL CHARACTERISTICS 25 °C unless noted
30
0.20
T_J = 150 °C
0.16
10
0.12
I_D = 2 A
I_D = 5 A
0.08
T_J = 25 °C
0.04
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
0.4
I_D = 250 µA
0.2
0.0
- 0.2
- 0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
0
10- ³
10- ² 10- ¹
1
10
Time (sec)
Single Pulse Power
100 600
100
r_DS(on) Limited
I_DM Limited
P(t) = 0.0001
10
1
I_D(on)
Limited
P(t) = 0.001
P(t) = 0.01
0.1
0.01
0.1
T_A = 25 °C
Single Pulse
BV_DSS Limited
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
1
10
100
V_DS - Drain-to-Source Voltage (V)
Safe Operating Area
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4
Document Number: 72241
S-61006-Rev. C, 12-Jun-06