SI4955DY_05 Datasheet, PDF (2/9 Pages) Vishay Siliconix – Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs

Si4955DY
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = - 250 µA
V_DS = V_GS, I_D = - 250 µA
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ± 20 V
V_DS = 0 V, V_GS = ± 8 V
V_DS = - 30 V, V_GS = 0 V
Zero Gate Voltage Drain Current
I_DSS
V_DS = - 20 V, V_GS = 0 V
V_DS = - 30 V, V_GS = 0 V, T_J = 85 °C
V_DS = - 20 V, V_GS = 0 V, T_J = 85 °C
On-State Drain Current^a
I_D(on)
V_DS ≥ - 5 V, V_GS = - 10 V
V_DS ≤ - 5 V, V_GS = - 10 V
V_GS = - 10 V, I_D = - 5.0 A
V_GS = - 4.5 V, I_D = - 7.0 A
Drain-Source On-State Resistance^a
r_DS(on)
V_GS = - 4.5 V, I_D = - 3.7 A
V_GS = - 2.5 V, I_D = - 6.2 A
V_GS = - 1.8 V, I_D = - 3 A
Forward Transconductance^a
g_fs
V_DS = - 15 V, I_D = - 5.0 A
V_DS = - 15 V, I_D = - 3 A
Diode Forward Voltage^a
V_SD
I_S = - 1.7 A, V_GS = 0 V
I_S = - 1.7 A, V_GS = 0 V
Dynamic^b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
Channel-1
V_DS = - 15 V, V_GS = - 10 V, I_D = - 5.0 A
Q_gs
Channel-2
Q_gd
V_DS = - 10 V, V_GS = - 4.5 V, I_D = - 7 A
Turn-On Delay Time
Rise Time
t_d(on)
t_r
Channel-1
V_DD = - 15 V, R_L = - 15 Ω
I_D ≅ - 1 A, V_GEN = - 10 V, R_G = 6 Ω
Turn-Off Delay Time
Fall Time
t_d(off)
t_f
Channel-2
V_DD = - 10 V, R_L = 10 Ω
I_D ≅ - 1 A, V_GEN = - 4.5 V, R_G = 6 Ω
Source-Drain Reverse Recovery Time
t_rr
I_F = - 1.7 A, di/dt = 100 A/µs
I_F = - 1.7 A, di/dt = 100 A/µs
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min
- 1.0
- 0.4
- 20
- 20
Typ
Max
-3
-1
± 100
± 100
-1
-1
-5
-5
0.044
0.022
0.082
0.029
0.039
10
25
- 0.80
- 0.80
0.054
0.027
0.100
0.035
0.048
- 1.2
- 1.2
12.5
19
21
25
2.1
2.6
3.5
6.0
7
15
20
30
10
15
40
60
30
45
125
190
22
35
85
130
25
60
64
90
Unit
V
nA
µA
A
Ω
S
V
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72241
S-61006-Rev. C, 12-Jun-06