SI4914DY Datasheet, PDF (6/9 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4914DY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless noted
40
35
V_GS = 10 thru 4 V
30
25
3V
20
15
10
5
0
0
1
2
3
4
5
V_DS – Drain-to-Source Voltage (V)
Output Characteristics
40
35
30
25
20
15
T_C = 125 °C
10
5
25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS – Gate-to-Source Voltage (V)
Transfer Characteristics
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
0
V_GS = 4.5 V
V_GS = 10 V
5 10 15 20 25 30 35 40
I_D – Drain Current (A)
On-Resistance vs. Drain Current
6
5
V_DS = 15 V
I_D = 7.4 A
1400
1120
C_iss
840
560
280
C_rss
C_oss
0
0
5
10
15
20
25
30
V_DS – Drain-to-Source Voltage (V)
Capacitance
1.8
1.6
V_GS = 10 V
I_D = 7.4 A
4
1.4
3
1.2
2
1.0
1
0.8
0
0
2
4
6
8
10
Q_g – Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J – Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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6
Document Number: 72938
S-61959-Rev. C, 09-Oct-06