SI4914DY Datasheet, PDF (3/9 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4914DY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless noted
40
35
V_GS = 10 thru 4 V
30
25
20
15
3V
10
5
0
0
1
2
3
4
5
V_DS – Drain-to-Source Voltage (V)
Output Characteristics
40
32
24
16
T_C = 125 °C
8
25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V_GS – Gate-to-Source Voltage (V)
Transfer Characteristics
0.05
1000
0.04
800
C_iss
0.03
0.02
V_GS = 4.5 V
V_GS = 10 V
0.01
0.00
0
5 10 15 20 25 30 35 40
I_D – Drain Current (A)
On-Resistance vs. Drain Current
6
V_DS = 15 V
5
I_D = 7 A
4
3
2
1
0
0.0
1.5
3.0
4.5
6.0
7.5
Q_g – Total Gate Charge (nC)
Gate Charge
600
400
200
C_rss
C_oss
0
0
5
10
15
20
25
30
V_DS – Drain-to-Source Voltage (V)
Capacitance
1.8
V_GS = 10 V
1.6
I_D = 7 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J – Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 72938
S-61959-Rev. C, 09-Oct-06
www.vishay.com
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