SI4914DY Datasheet, PDF (2/9 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4914DY
Vishay Siliconix
MOSFET SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ^a
Max
Unit
Static
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 µA
Ch-1 1.0
Ch-2 1.0
2.5
V
2.5
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = 20 V
Ch-1
Ch-2
100
nA
100
Zero Gate Voltage Drain Current
I_DSS
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 85 °C
Ch-1
Ch-2
Ch-1
Ch-2
1
µA
500
0.015
mA
20
On-State Drain Current^b
I_D(on)
V_DS = 5 V, V_GS = 10 V
Ch-1
20
Ch-2
20
A
Drain-Source On-State Resistance^b
r_DS(on)
Forward Transconductance^b
g_fs
Diode Forward Voltage^b
V_SD
Dynamic^a
V_GS = 10 V, I_D = 7.0 A
V_GS = 10 V, I_D = 7.4 A
V_GS = 4.5 V, I_D = 5.6 A
V_GS = 4.5 V, I_D = 6.4 A
V_DS = 15 V, I_D = 7.0 A
V_DS = 15 V, I_D = 7.4 A
I_S = 1.7 A, V_GS = 0 V
I_S = 1 A, V_GS = 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.019 0.023
0.016 0.020
Ω
0.026 0.032
0.022 0.027
19
S
22
0.75
1.1
V
0.36
0.40
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
Channel-1
Ch-1
Ch-2
Q_gs
V_DS = 15 V, V_GS = 4.5 V, I_D = 7.0 A
Channel-2
Ch-1
Ch-2
Q_gd
V_DS = 15 V, V_GS = 4.5 V, I_D = 7.4 A ^Ch-1
Ch-2
5.6
8.5
7.3
11
2.3
nC
2.8
1.7
2.2
Gate Resistance
R_g
Ch-1 0.5
2.3
3.6
Ω
Ch-2 0.5
1.6
2.5
Turn-On Delay Time
Rise Time
t_d(on)
t_r
Channel-1
V_DD = 15 V, R_L = 15 Ω
I_D ≅ 1 A, V_GEN = 10 V, R_g = 6 Ω
Ch-1
Ch-2
Ch-1
Ch-2
6
10
7
11
13
20
13
20
Turn-Off Delay Time
Fall Time
t_d(off)
t_f
Channel-2
V_DD = 15 V, R_L = 15 Ω
I_D ≅ 1 A, V_GEN = 10 V, R_g = 6 Ω
Ch-1
Ch-2
Ch-1
Ch-2
27
40
ns
35
53
9
15
10
15
Source-Drain Reverse Recovery Time
t_rr
I_F = 1.3 A, di/dt = 100 A/µs
I_F = 2.2 A, di/dt = 100 µA/µs
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Ch-1
Ch-2
30
50
30
50
SCHOTTKY SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Forward Voltage Drop
V_F
Maximum Reverse Leakage Current I_rm
Junction Capacitance
C_T
I_F = 1.0 A
I_F = 1.0 A, T_J = 150 °C
V_r = 30 V
V_r = 30 V, T_J = 100 °C
V_r = - 30 V, T_J = 125 °C
V_r = 10 V
0.36
0.40
V
0.27
0.31
0.008
0.50
3.5
10
mA
10
100
58
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72938
S-61959-Rev. C, 09-Oct-06