SI4914DY Datasheet, PDF (4/9 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4914DY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless noted
40
0.10
0.08
T_J = 150 °C
10
0.06
T_J = 25 °C
0.04
0.02
I_D = 7 A
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD – Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.2
I_D = 250 µA
0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 50 - 25
0 25 50 75 100 125 150
T_J – Temperature (°C)
Threshold Voltage
100
r_DS(on) Limited
0.00
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
160
120
80
40
0
0.001
0.01
0.1
1
10
Time (sec)
Single Pulse Power, Junction-to-Ambient
I_DM Limited
10
1 ms
1
I_D(on)
Limited
10 ms
0.1
0.01
0.1
T_C = 25 °C
Single Pulse
BV_DSS Limited
100 ms
1s
10 s
dc
1
10
100
V_DS – Drain-to-Source Voltage (V)
Safe Operating Area
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4
Document Number: 72938
S-61959-Rev. C, 09-Oct-06