SI4914DY Datasheet, PDF (1/9 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

New Product
Si4914DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
Channel-1
30
Channel-2
0.023 at V_GS = 10 V
0.032 at V_GS = 4.5 V
0.020 at V_GS = 10 V
0.027 at V_GS = 4.5 V
I_D (A)
7.0
5.6
7.4
6.4
SCHOTTKY PRODUCT SUMMARY
V_DS (V)
V_SD (V)
Diode Forward Voltage
I_F (A)
30
0.40 V at 1.0 A
2.0
FEATURES
• LITTLE FOOT^® Plus Integrated Schottky
• 100 % R_g Tested
APPLICATIONS
• Logic DC/DC
- Notebook PC
RoHS
COMPLIANT
D₁
D_{1 1}
D_{1 2}
G_{2 3}
S_{2 4}
SO-8
8 ^G1
7 ^S1^/D2
6 ^S1^/D2
5 ^S1^/D2
Top View
Ordering Information: Si4914DY-T1-E3 (Lead (Pb)-free)
G₁
N-Channel 1
MOSFET
G₂
N-Channel 2
MOSFET
S₂
S₁/D₂
Schottky Diode
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Channel-1
Channel-2
Symbol
Unit
10 sec Steady State 10 sec Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
20
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
7.0
5.6
5.5
4.3
7.4
6
5.7
4.5
Pulsed Drain Current
I_DM
40
40
A
Continuous Source Current (Diode Conduction)^a
I_S
1.7
1.0
1.8
0.95
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
I_AS
E_AS
13
8.45
15
11
mJ
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
1.9
1.2
1.1
0.71
2.0
1.3
1.16
0.74
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
t ≤ 10 sec
Steady State
Steady State
R_thJA
R_thJF
Document Number: 72938
S-61959-Rev. C, 09-Oct-06
Channel-1
Typ
Max
52
65
90
112
30
38
Channel-2
Typ
Max
47
60
85
107
28
35
Unit
°C/W
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