SI4684DY_06 Datasheet, PDF (6/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si4684DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10- ⁴
Notes:
P_DM
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 70 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10- ³
10- ²
10- ¹
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 _0.05
0.02
Single Pulse
0.01
10- ⁴
10- ³
10- ²
10- ¹
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73324.
www.vishay.com
6
Document Number: 73324
S-61013-Rev. B, 12-Jun-06