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| SI4684DY_06 Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET | |||
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New Product
N-Channel 30-V (D-S) MOSFET
Si4684DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
30
0.0094 at VGS = 10 V
0.0115 at VGS = 4.5 V
ID (A)a
16
14
Qg (Typ)
14 nC
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4684DY-T1-E3 (Lead (Pb)-free)
FEATURES
⢠Extremely Low Qgd WFET® Technology
for Low Switching Losses
⢠TrenchFET® Power MOSFET
⢠100 % Rg Tested
APPLICATIONS
⢠High-Side DC/DC Conversion
- Notebook
- Server
D
RoHS
COMPLIANT
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
V
VGS
± 12
TC = 25 °C
16
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
12.9
12b,c
Pulsed Drain Current
TA = 70 °C
9.5b,c
A
IDM
50
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
4.0
2.3b,c
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
20
EAS
20
mJ
TC = 25 °C
4.45
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
2.85
2.50b,c
W
TA = 70 °C
1.6b,c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb,d
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. Maximum under Steady State conditions is 90 °C/W.
t ⤠10 sec
Steady State
Document Number: 73324
S-61013-Rev. B, 12-Jun-06
Symbol
RthJA
RthJF
Typical
36
22
Maximum
50
28
Unit
°C/W
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