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SI4684DY_06 Datasheet, PDF (5/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET | |||
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TYPICAL CHARACTERISTICS 25 °C unless noted
20
16
12
8
4
Package Limited
0
0
25
50
75
100 125 150
TC â Case Temperature (°C)
Current Derating*
Si4684DY
Vishay Siliconix
100
10
1
TA =
L·
BV -
ID
VDD
0.1
0.00001 0.0001 0.001 0.01
0.1
1
TA â Time In Avalanche (sec)
Single Pulse Avalanche Capability
*The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi-
pation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 73324
S-61013-Rev. B, 12-Jun-06
www.vishay.com
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