SI4684DY_06 Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C unless noted
50
V_GS = 10 thru 3 V
40
30
20
2V
10
0
0.0
0.5
1.0
1.5
2.0
V_DS – Drain-to-Source Voltage (V)
Output Characteristics
0.012
0.011
0.010
0.009
0.008
V_GS = 4.5 V
V_GS = 10 V
0.007
0.006
0
5 10 15 20 25 30 35 40
I_D – Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 11 A
8
6
4
V_DS = 10 V
V_DS = 15 V
V_DS = 20 V
2
0
0 4 8 12 16 20 24 28 32
Q_g – Total Gate Charge (nC)
Gate Charge
Document Number: 73324
S-61013-Rev. B, 12-Jun-06
Si4684DY
Vishay Siliconix
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
2500
2000
T_C = 125 °C
25 °C
- 55 °C
0.5
1.0
1.5
2.0
V_GS – Gate-to-Source Voltage (V)
Transfer Characteristics
C_iss
1500
1000
500
C_rss
C_oss
0
0
5
10
15
20
25
30
V_DS – Drain-to-Source Voltage (V)
Capacitance
1.8
1.6
I_D = 12 A
1.4
1.2
V_GS = 10 V
V_GS = 4.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J – Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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