SI4684DY_06 Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si4684DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
40
10
T_J = 150 °C
1
0.1
T_J = 25 °C
0.01
0.001
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.2
0.0
- 0.2
I_D = 5 mA
- 0.4
I_D = 250 µA
- 0.6
- 50 - 25
0 25 50 75 100 125 150
T_J – Temperature (°C)
Threshold Voltage
100
*Limited by r_DS(on)
10
0.05
0.04
I_D = 12 A
0.03
0.02
T_J = 125 °C
0.01
T_J = 25 °C
0.00
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
160
120
80
40
0
0.001
0.01
0.1
1
10
Time (sec)
Single Pulse Power, Junction-to-Ambient
1 ms
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4
10 ms
1
100 ms
1s
0.1
10 s
T_A = 25 °C
Single Pulse
dc
0.01
0.1
1
10
100
V_DS – Drain-to-Source Voltage (V)
*V_GS > minimum V_GS at which r_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 73324
S-61013-Rev. B, 12-Jun-06