SI4562DY_06 Datasheet, PDF (6/7 Pages) Vishay Siliconix – N- and P-Channel 2.5-V (G-S) MOSFET

Si4562DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
40
0.10
T_J = 150 °C
10
T_J = 25 °C
0.08
0.06
0.04
I_D = 6.2 A
0.02
1
0 0.2 0.4 _0.6 0.8 1.0 1.2 1.4 1.6
V_SD − Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
0.00
0
1
2
3
4
5
GS ^{− Gate-to-Source Voltage (V)}
On-Resistance vs. Gate-to-Source Voltage
30
24
0.3
I_D = 250 µA
18
12
0.0
6
- 0.3
- 50 - 25
0 25 50 75 100 125 150
T_J − Temperature (°C)
Threshold Voltage
2
1
Duty Cycle = 0.5
0
0.01
0.10
1.00
10.00
Time (sec)
Single Pulse Power vs. Junction-to-Ambient
0.2
Notes:
0.1
P_DM
0.1
0.05
0.02
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 62.5 °C/W
3. T_JM − T_A = P_DMZ_thJA(t)
4. Surface Mounted
0.01
10^-4
10^-3
10^-2
10^-1
1
10
30
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?70717.
www.vishay.com
6
Document Number: 70717
S-51109-Rev. B, 04-Apr-06