SI4562DY_06 Datasheet, PDF (1/7 Pages) Vishay Siliconix – N- and P-Channel 2.5-V (G-S) MOSFET

Si4562DY
Vishay Siliconix
N- and P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
N-Channel
20
0.025 at V_GS = 4.5 V
0.035 at V_GS = 2.5 V
P-Channel
- 20
0.033 at V_GS = - 4.5 V
0.050 at V_GS = - 2.5 V
I_D (A)
7.1
6.0
- 6.2
- 5.0
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
Top View
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Ordering Information: Si4562DY-T1
Si4562DY-T1-E3 (Lead (Pb)-free)
FEATURES
• TrenchFet^® Power MOSFET: 2.5 Rated
Pb-free
Available
RoHS*
COMPLIANT
D₁
G₁
S₂
G₂
S₁
N-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25 °C
T_A = 70 °C
T_A = 25 °C
T_A = 70 °C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
- 20
± 12
7.1
- 6.2
5.7
- 4.9
40
- 40
1.7
- 1.7
2.0
1.3
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Symbol
R_thJA
N- or P-Channel
62.5
Unit
V
A
W
°C
Unit
°C/W
Notes:
a. Surface Mounted on FR4 Board, t ≤10 sec.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 70717
S-51109-Rev. B, 04-Apr-06
Work-in-Progress
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