SI4562DY_06 Datasheet, PDF (3/7 Pages) Vishay Siliconix – N- and P-Channel 2.5-V (G-S) MOSFET

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
40
40
V_GS = 5 thru 3 V
2.5 V
30
30
Si4562DY
Vishay Siliconix
20
2V
10
1, 1.5 V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_DS − Drain-to-Source Voltage (V)
Output Characteristics
0.10
0.08
0.06
0.04
0.02
0.00
0
V_GS = 2.5 V
V_GS = 4.5 V
10
20
30
40
I_D − Drain Current (A)
On-Resistance vs. Drain Current
5
V_DS = 10 V
I_D = 7.1 A
4
3
2
1
0
0
5
10
15
20
25
Q_g − Total Gate Charge (nC)
Gate Charge
Document Number: 70717
S-51109-Rev. B, 04-Apr-06
20
T_C = 125 °C
10
25 °C
- 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS − Gate-to-Source Voltage (V)
Transfer Characteristics
4000
3200
C_iss
2400
1600
C_oss
800
C_rss
0
0
4
8
12
16
20
V_DS − Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 4.5 V
I_D = 7.1 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J − Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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