SI4562DY_06 Datasheet, PDF (4/7 Pages) Vishay Siliconix – N- and P-Channel 2.5-V (G-S) MOSFET

Si4562DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
40
0.10
0.08
T_J = 150 °C
10
0.06
T_J = 25 °C
0.04
I_D = 7.1 A
0.02
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD − Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.00
0
1
2
3
4
5
GS ^{− Gate-to-Source Voltage (V)}
On-Resistance vs. Gate-to-Source Voltage
30
0.2
24
0.0
I_D = 250 µA
18
- 0.2
12
- 0.4
6
- 0.6
- 50 - 25
0 25 50 75 100 125 150
T_J − Temperature (°C)
Threshold Voltage
2
1
Duty Cycle = 0.5
0
0.01
0.10
1.00
10.00
Time (sec)
Single Pulse Power
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
Notes:
P_DM
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 62.5 °C/W
3. T_JM − T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^-3
10^-2
10^-1
1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
30
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4
Document Number: 70717
S-51109-Rev. B, 04-Apr-06