SI4562DY_06 Datasheet, PDF (2/7 Pages) Vishay Siliconix – N- and P-Channel 2.5-V (G-S) MOSFET

Si4562DY
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V_GS(th)
I_GSS
V_DS = V_GS, I_D = 250 µA
V_DS = V_GS, I_D = - 250 µA
V_DS = 0 V, V_GS = ± 12 V
N-Ch
P-Ch
N-Ch
P-Ch
0.6
- 0.6
1.6
V
- 1.6
± 100
nA
± 100
Zero Gate Voltage Drain Current
I_DSS
V_DS = 20 V, V_GS = 0 V
V_DS = - 20 V, V_GS = 0 V
V_DS = 20 V, V_GS = 0 V, T_J = 55 °C
V_DS = - 20 V, V_GS = 0 V, T_J = 55 °C
N-Ch
P-Ch
N-Ch
P-Ch
1
-1
µA
5
-5
On-State Drain Current^b
I_D(on)
Drain-Source On-State Resistance^{b r}DS(on)
Forward Transconductance^b
g_fs
Diode Forward Voltage^b
V_SD
Dynamic^b
V_DS ≥ 5 V, V_GS = 4.5 V
V_DS ≤ - 5 V, V_GS = - 4.5 V
V_GS = 4.5 V, I_D = 7.1 A
V_GS = - 4.5 V, I_D = - 6.2 A
V_GS = 2.5 V, I_D = 6.0 A
V_GS = - 2.5 V, I_D = - 5.0 A
V_DS = 10 V, I_D = 7.1 A
V_DS = - 10 V, I_D = - 6.2 A
I_S = 1.7 A, V_GS = 0 V
I_S = - 1.7 A, V_GS = 0 V
N-Ch
20
A
P-Ch - 20
N-Ch
0.019 0.025
P-Ch
N-Ch
0.027 0.033
Ω
0.025 0.035
P-Ch
0.040 0.050
N-Ch
27
S
P-Ch
20
N-Ch
P-Ch
1.2
V
- 1.2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
N-Channel
V_DS = 10 V, V_GS = 4.5 V, I_D = 7.1 A
P-Channel
V_DS = - 10 V, V_GS = - 4.5 V, I_D = - 6.2 A
N-Channel
V_DD = 10 V, R_L = 10 Ω
I_D ≅ 1 A, V_GEN = 4.5 V, R_G = 6 Ω
P-Channel
V_DD = - 10 V, R_L = 10 Ω
I_D ≅ - 1 A, V_GEN = - 4.5 V, R_G = 6 Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
25
50
22
35
6.5
nC
7
4
3.5
40
60
27
50
40
60
32
50
90
150
95
150
ns
40
60
45
70
Sorce-Drain Reverse Recovery Tme
t_rr
I_F = 1.7 A, di/dt = 100 A/µs
I_F = - 1.7 A, di/dt = 100 A/µs
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
N-Ch
P-Ch
40
80
40
80
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70717
S-51109-Rev. B, 04-Apr-06