IRFPS40N60K Datasheet, PDF (6/9 Pages) International Rectifier – HEXFET-R Power MOSFET

IRFPS40N60K, SiHFPS40N60K
Vishay Siliconix
15 V
V_DS
L
Driver
R_G
20 V
t_p
D.U.T.
I_AS
0.01 Ω
+
- ^VD^AD
Fig. 12a - Unclamped Inductive Test Circuit
V_DS
t_p
I_AS
Fig. 12b - Unclamped Inductive Waveforms
1200
960
ID
TOP
17A
24A
BOTTOM
38A
720
480
240
0
25
50
75
100
125
150
Starting Tj, Junction Temperature
( ^°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
5.0
4.5
4.0
ID = 250μA
3.5
3.0
2.5
2.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig. 12d - Threshold Voltage vs. Temperature
V_GS V
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - ^VDS
V_GS
3 mA
I_G
I_D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
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Document Number: 91261
S11-0112-Rev. B, 31-Jan-11