IRFPS40N60K Datasheet, PDF (3/9 Pages) International Rectifier – HEXFET-R Power MOSFET

IRFPS40N60K, SiHFPS40N60K
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1000
100
10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
0.1
4.5V
0.01
0.001
0.1
20μs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
1000
100 _{TJ= 150} °_C
10
T_J= 25 ^°C
1
0.1
0.01
4
V _DS= 50V
20μs PULSE WIDTH
6
8
10
11
13
15
V _GS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
10
5.0V
BOTTOM 4.5V
1
4.5V
0.1
0.1
20μs PULSE WIDTH
Tj = 150°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
3.5
I D = 38A
3.0
2.5
2.0
1.5
1.0
0.5
V _GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature
( ^° C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91261
S11-0112-Rev. B, 31-Jan-11
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