IRFPS40N60K Datasheet, PDF (5/9 Pages) International Rectifier – HEXFET-R Power MOSFET

IRFPS40N60K, SiHFPS40N60K
Vishay Siliconix
40
30
20
10
0
25
50
75
100
125
150
T_C , Case Temperature
( ^° C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
1
V_DS
V_GS
R_G
R_D
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+_{- VDD}
Fig. 10a - Switching Time Test Circuit
V_DS
90 %
10 %
V_GS
t_d(on) t_r
t_d(off) t_f
Fig. 10b - Switching Time Waveforms
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P _DM
t₁
t₂
0.001
0.00001
Notes:
1. Duty factor D =
t₁/ t ₂
2. Peak T _J = P _DM x Z _thJC + T _C
0.0001
0.001
0.01
0.1
1
t₁, Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91261
S11-0112-Rev. B, 31-Jan-11
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