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IRFPS40N60K Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET-R Power MOSFET
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IRFPS40N60K, SiHFPS40N60K
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.22
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 24 Ab
VDS = 50 V, ID = 24 Ab
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Coss eff.
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 0 V
VDS = 1.0 V , f = 1.0 MHz
VDS = 480 V , f = 1.0 MHz
VDS = 0 V to 480 Vc
ID = 38 A, VDS = 480 V,
see fig. 6 and 13b
VGS = 10 V
VDD = 300 V, ID = 38 A,
RG = 4.3 , see fig. 10b
MIN.
600
-
3.0
-
-
-
-
21
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
0.63
-
-
-
-
0.110
-
-
-
5.0
± 100
50
250
0.130
-
V
V/°C
V
nA
μA

S
7970
-
750
-
75
-
pF
9440
-
200
-
260
-
-
330
-
84
nC
-
150
47
-
110
-
ns
97
-
60
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Currenta
ISM
p - n junction diode
D
G
S
-
-
40
A
-
-
160
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Body Diode Recovery Current
VSD
trr
Qrr
IRRM
TJ = 25 °C, IS = 38 A, VGS = 0 Vb
-
-
1.5
V
TJ = 25 °C
-
630 950
ns
TJ = 125 °C
IF = 38 A, dI/dt = 100
-
730 1090
TJ = 25 °C
A/μs
-
14
20
μC
TJ = 125 °C
-
17
25
TJ = 25 °C
-
39
58
A
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
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Document Number: 91261
S11-0112-Rev. B, 31-Jan-11
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