IRFPS40N60K Datasheet, PDF (4/9 Pages) International Rectifier – HEXFET-R Power MOSFET

IRFPS40N60K, SiHFPS40N60K
Vishay Siliconix
100000
10000
VGS = 0V, f = 1 MHZ
CCirssss
=
=
CCggsd+
Cgd,
Cds
Coss = Cds + Cgd
SHORTED
Ciss
1000
100
Coss
Crss
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
1000
100
T_J= 150 ^°C
10
T_J= 25 ^°C
1
0.1
0.2
V _GS = 0 V
0.6
0.9
1.3
1.6
V _SD,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
12
ID = 38A
10
V_DS = 480V
V_DS = 300V
V_DS = 120V
7
5
2
0
0
50
100
150
200
250
Q_G, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
10
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
10msec
100
1000 10000
VDS , Drain-toSource Voltage (V)
Fig. 8 - Maximum Safe Operating Area
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4
Document Number: 91261
S11-0112-Rev. B, 31-Jan-11