IRFB17N50L Datasheet, PDF (6/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)typ.=0.28ohm, Id=16A)

IRFB17N50L, SiHFB17N50L
Vishay Siliconix
800
ID
TOP
7A
10 A
640
BOTTOM 16 A
480
320
160
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
V_GS
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - ^VDS
V_GS
3 mA
I_G
I_D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
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Document Number: 91098
S-81263-Rev. A, 21-Jul-08