IRFB17N50L Datasheet, PDF (5/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)typ.=0.28ohm, Id=16A)

IRFB17N50L, SiHFB17N50L
Vishay Siliconix
20
16
12
8
4
0
25
50
75
100
125
150
TC, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
V_DS
V_GS
R_G
R_D
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+_{- VDD}
Fig. 10a - Switching Time Test Circuit
V_DS
90 %
10 %
V_GS
t_d(on) t_r
t_d(off) t_f
Fig. 10b - Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1/ t2
2. Peak TJ = PDM x ZthJC + TC
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
15 V
V_DS
L
Driver
R_G
20 V
tp
D.U.T
I_AS
0.01 Ω
+
- ^VD^AD _A
Fig. 12a - Unclamped Inductive Test Circuit
V_DS
t_p
I_AS
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91098
S-81263-Rev. A, 21-Jul-08
www.vishay.com
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