IRFB17N50L Datasheet, PDF (3/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)typ.=0.28ohm, Id=16A)

IRFB17N50L, SiHFB17N50L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
Top
Bottom
VGS
15 V
12 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
100
10
1
TJ = 150 °C
TJ = 25 °C
5.0 V
1
0.1
0.01
0.1
20 μs PULSE WIDTH
TJ = 25 °C
1
10
100
V_DS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
0.1
4.0
5.0 6.0
V_DS = 50 V
20 μs PULSE WIDTH
7.0 8.0 9.0 10.0
V_GS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
10
VGS
Top
15 V
12 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom 5.0 V
1
5.0 V
20 μs PULSE WIDTH
TJ = 125 °C
0.1
0.1
1
10
100
V_DS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
3.0
ID = 16 A
2.5
2.0
1.5
1.0
0.5
V_GS = 10 V
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91098
S-81263-Rev. A, 21-Jul-08
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