IRFB17N50L Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)typ.=0.28ohm, Id=16A)

IRFB17N50L, SiHFB17N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
R_thJA
R_thCS
R_thJC
TYP.
-
0.50
-
MAX.
62
-
0.56
UNIT
°C/W
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
V_DS
ΔV_DS/T_J
V_GS(th)
I_GSS
I_DSS
R_DS(on)
g_fs
V_GS = 0 V, I_D = 250 µA
Reference to 25 °C, I_D = 1 mA
V_DS = V_GS, I_D = 250 µA
V_GS = ± 30 V
V_DS = 500 V, V_GS = 0 V
V_DS = 400 V, V_GS = 0 V, T_J = 125 °C
V_GS = 10 V
I_D = 9.9 A^b
V_DS = 50 V, I_D = 9.9 A^b
500
-
-
V
-
0.6
-
V/°C
3.0
-
5.0
V
-
-
± 100 nA
-
-
50
µA
-
-
2.0 mA
-
0.28 0.32
Ω
11
-
-
S
Input Capacitance
C_iss
Output Capacitance
C_oss
Reverse Transfer Capacitance
C_rss
Output Capacitance
C_oss
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
C_oss eff.
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Continuous Source-Drain Diode Current
I_S
Pulsed Diode Forward Current^a
I_SM
-
V_GS = 0 V,
V_DS = 25 V,
-
f = 1.0 MHz, see fig. 5
-
V_GS = 0 V V_DS = 1.0 V , f = 1.0 MHz
-
V_GS = 0 V V_DS = 400 V , f = 1.0 MHz
-
V_GS = 0 V
V_DS = 0 V to 400 V^c
-
-
V_GS = 10 V
I_D = 16 A, V_DS = 400 V,
see fig. 6 and 13^b
-
-
-
V_DD = 250 V, I_D = 16 A,
-
R_G = 7.5 Ω, see fig. 10^b
-
-
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
-
G
-
S
2760
-
325
-
37
-
pF
3690
-
84
-
159
-
-
130
-
33
nC
-
59
21
-
51
-
ns
50
-
28
-
-
16
A
-
64
Body Diode Voltage
V_SD
T_J = 25 °C, I_S = 16 A, V_GS = 0 V^b
-
-
1.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
T_J = 25 °C
-
170 250
t_rr
ns
T_J = 125 °C _{IF = 16 A, dI/dt = 100 A/µsb}
-
220 330
T_J = 25 °C
-
470 710
Q_rr
nC
T_J = 125 °C
-
810 1210
Reverse Recovery Current
I_RRM
-
7.3
11
A
Forward Turn-On Time
t_on
Intrinsic turn-on time is negligible (turn-on is dominated by L_S and L_D)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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Document Number: 91098
S-81263-Rev. A, 21-Jul-08